2025 01 v.40 3-12+2
高性能非晶态透明导电Cd-In-O合金薄膜的光电特性及其柔性光伏应用
基金项目(Foundation):
广东省基础与应用基础研究委员会基金（2023A1515010556,2024A1515012961）;
国家自然科学基金委基金（12374073）;
李嘉诚基金会基金（2024LKSFG01）
邮箱(Email):
DOI:
中文作者单位:
汕头大学理学院物理系;汕头大学化学化工学院;
摘要(Abstract):
透明导电氧化物(TCOs)是现代光电子领域的关键材料.然而,常规以晶态In_2O_3:Sn为代表的TCOs薄膜在近红外波段透明度和机械柔性方面存在局限,这严重限制了其在全光谱器件和柔性光电子设备的应用.因此,开发具有全光谱透明度及良好柔性的TCOs薄膜显得尤为重要.本文利用室温磁控共溅射法生长了Cd_(1-x)In_xO_(1+δ)合金薄膜,研究了其晶体结构和光电特性随合金组分的变化.我们成功获得了高性能的非晶态透明导电Cd_(1-x)In_xO_(1+δ)合金薄膜,探究了其相应的环境稳定性和机械柔性,并探讨了其柔性太阳能电池应用.研究结果为非晶态透明导电Cd-In-O合金薄膜的深入研究与其光电应用提供了重要的参考依据.
关键词(KeyWords):
透明导电氧化物;非晶态;Cd-In-O合金;光电性质;柔性太阳能电池
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[2] MORALES-MASIS M,De WOLF S,WOODS-ROBINSON R,et al. Transparent electrodes for efficient optoelectronics[J]. Advanced Electronic Materials,2017,3(5):1600529.
[3] GINLEY D S,HOSONO H,PAINE D C. Handbook of transparent conductors[M]. New York:Springer,2011.
[4] DIXON S C,SCANLON D O,CARMALTA C J,et al. n-Type doped transparent conducting binary oxides:an overview[J]. J Mater Chem C,2016,29(4):6946-6961.
[5] FORTUNATO E,BARQUINHA P,MARTINS R. Oxide semiconductor thin film transistors:areview of recent advances[J]. Adv Mater,2012,24(22):2945-2986.
[6] YU K M,MAYER M A,SPEAKS D T,et al. Transparent conductors for full spectrum photovoltaics[J].Journal of Applied Physics,2012,111(12):123505.
[7] NGUYEN T T, PATEL M, KIM J. Multifunctional AZO/Ag(O)-based transparent conductor fo r flexible and transparent optoelectronics[J]. Solar RRL,2024(9):8.
[8] CHANG S,KOO J H,YOO J,et al. Flexible and stretchable light-emitting diodesand photodetectors for human-centric optoelectronics[J]. Chem Rev,2004,124(3):768-859.
[9] MA D,JI M,YI H,et al. Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process[J]. Nat Commun,2024,15:2248.
[10] WU Y Y,XU G Y,XI J C,et al. In situ crosslinking-assisted perovskite grain growth for mechanically robust flexible perovskite solar cells with 23.4%efficiency[J]. Joule,2023,7(2):398.
[11] KUMAR S,SEO Y. Flexible transparent conductive electrodes:unveiling growth mechanisms,material dimensions,fabrication methods,and design strategies[J]. Small Methods,2023,8(1):2300908.
[12] WON D,BANG J,CHOI S H,et al. Transparent electronics for wearable electronics application[J].Chemical Reviews,2023,123(16):9982-10078.
[13] NGUYEN V H,PAPANASTASIOU D T,RESENDE J,et al. Advances in flexible metallic transparent electrodes[J]. Small,2022,19(19):2106006.
[14] JI C G, LIU D, ZHANG C, et al. Ultrathin-metal-film-based transparent electrodes with relative transmittance surpassing 100%[J]. Nat Commun,2020,11(1):3367.
[15] SIM S H,KANG K T,LEE S,et al. Indium-free amorphous Ca-Al-O thin films as a transparent conducting oxides[J]. Chem Mater,2019,31(19):8019-8025.
[16] KOIDA T,NOMOTO J. Sustainable transparent conducting oxides:insights from amorphous SnOx thin films via oxygen stoichiometry control[J]. Chem Mater,2024,36(14):6838-6848.
[17] LIU C P,HO Y,KWOK C C K,et al. High mobility transparent amorphous CdO-In2O3alloy films synthesized at room temperature[J]. Appl Phys Lett,2017,111(7):072108.
[18] HOSONO H. Ionic amorphous oxide semiconductors:material design,carrier transport,and device application[J]. J Non-Cryst Solids,2006,352:851-858.
[19] LIU C P,HO C Y,DOS REIS R,et al. Room-temperature-synthesized high-mobility transparent amorphous CdO-Ga2O3alloys with widely tunable electronic bands[J]. ACS Appl Mater Interfaces,2018,10(8):7239-7247.
[20] JIA J, IWASAKI S, YAMAMOTO S, et al. Temporal evolution of microscopic structure and functionality during crystallization of amorphous indium-based oxide films[J]. ACS Appl Mater Interfaces,2021,13(27):31825-31834.
[21] TAYLOR M P,READEY D W,VAN HEST M F A M,et al. The remarkable thermal stability of amorphous In-Zn-O transparent conductors[J]. Adv Funct Mater,2008,18(20):3169-3178.
[22] BURBANO M, SCANLON D O, WATSON G W. Source of conductivity and doping limits in CdO from hybrid density functional theory[J]. J Am Chem Soc,2011,133(38):15065-15072.
[23] WU Y,WANG Y,WANG M X, et al. Tailoring epsilon-near-zero wavelength and nonlinear absorption properties of CdO thin films by Mo doping[J]. Appl Phys Lett,2024,125(1):011104.
[24] YANG Y, LU J, MANJAVACAS A, et al. High-harmonic generation from an epsilon-near-zero material[J]. Nat Phys,2019,15(10):1022.
[25] YUK M,DETERT D M,CHENG B,et al. Defects and properties of cadmium oxide based transparent conductors[J]. J Appl Phys,2016,119(18):181501.
[26] LIU C P,FOO Y,KAMRUZZAMAN M,et al. Effects of free carriers on the optical properties of doped CdO for full-spectrum photovoltaics[J]. Phys Rev Appl,2016, 6(6):064018.
[27] LIU C P,WU S,ZHANG Y,et al. Resonant transition metal Ti or Ta doping in high mobility transparent conducting CdO:the effects of doping concentration[J]. Phys Rev Materials,2024,8(4):044603.
[28] WU S, ZHA S J, ZHANG Y, et al. Defect-dependent environmental stability of high mobility transparent conducting In-doped CdO[J]. J Appl Phys,2024,135(4):045302.
[29] YU K M,ZHU W,WANG Y,et al. Transition metal elements as donor dopants in CdO[J]. Phys Rev Materials,2023,7(7):074602.
[30] WANG Y,LI M,FAN B,et al. Flexibility of room-temperature-synthesized amorphous CdO-In2O3alloy films and their application as transparent conductors in solar cells[J]. ACS Appl Mater Interfaces,2021,13(36):43795-43805.
[31] J A WOOLLAM CO INC. CompleteEASETMdata analysis manual[M]. USA,2011.
[32] PARKS I,AHN J H,FENG X,et al. Theoretical and experimental studies of bending of inorganic electronic materials on plastic substrates[J]. Adv Funct Mater,2008,18(18):2673-2684.
[33] SMIRNOV Y,REPECAUD P A,TUTSCH L,et al. Wafer-scale pulsed laser deposition of ITO for solar cells:reduced damage vs. interfacial resistance[J]. Materials Advances,2022,3(8):3469-3478.
基本信息:
DOI：
中图分类号:TB383.2
引用信息:
[1]巫珊,叶芷桦,张洋等.高性能非晶态透明导电Cd-In-O合金薄膜的光电特性及其柔性光伏应用[J].汕头大学学报(自然科学版),2025,40(01):3-12+2.
基金信息:
广东省基础与应用基础研究委员会基金（2023A1515010556,2024A1515012961）; 国家自然科学基金委基金（12374073）; 李嘉诚基金会基金（2024LKSFG01）