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本文报道了采用四极质谱计实现在PCVD系统中对制备a－Si：H薄膜时的硅烷射频辉光放电中性基团的在线测量。获取了在低压强、小放电功率条件下，SiH2与SiH3基团的相对丰度比。
Abstract：In this paper are reported the findings of the relative abundance ratio of SiH2radical and SiH3 radical at low pressure and small discharge power by means of the in-stallation of a quadrupole mass spectrometer on the plasma chemical vapor deposition(PCVD) system for performlng in-line probing of neutral radicals in the course of silaneradio-frequency glow discharge while preparing a-Si: H films.
1 Kushner M J. On the balance between silylene and silyl radicals in rf glow discharges in silane: theeffect on deposition rates of a-Si:H.J Appl.Phys.:1987.62:2803-2811
2 Robertson R. and Gallagher A. Mono-and disilicon radicals in silane and silane-argon dc discharges.J.Appl.Phys 1986,59:3402-3411
3 Lin Quixun, Lin Xuanyin, Zeng Xu. et al. Monosilicon radicals in pure silane rf glow discharge.Chinese Phys.Lett. 1993, 10: 342-345
基本信息:
DOI：
中图分类号:O536
引用信息:
[1]姚若河,林揆训,石旺舟,林璇英.硅烷射频辉光放电中的SiH_2/SiH_3[J].汕头大学学报(自然科学版),1998(02):16-18+23.
基金信息:
国家自然科学基金;;广东省高教厅科研课题